Comparison between BJT and MOSFET
|
Sr# |
Bi-Polar
Junction Transistor (BJT) |
Metal Oxide Field
Effect Transistor (MOSFET) |
|
1 |
It is a Bipolar Device |
It is majority carrier
Device |
|
2 |
Current control Device |
Voltage control Device. |
|
3 |
Output is controlled by
controlling base current |
Output is controlled by
controlling gate voltage |
|
4 |
Negative temperature
coefficient |
Positive temperature
coefficient |
|
5 |
So, paralleling of BJT is
difficult. |
So, paralleling of this
device is easy. |
|
6 |
Dive circuit is complex.
It should provide |
Dive circuit is simple.
It should provide |
|
7 |
constant current (Base
current) |
constant voltage (gate
voltage) |
|
8 |
Losses are low. |
Losses are higher than
BJTs. |
|
9 |
So used in high power
applications. |
Used in low power
applications. |
|
10 |
BJTs have high voltage
and current ratings. |
They have less voltage
and current ratings. |
|
11 |
Switching frequency is
lower than MOSFET. |
Switching frequency is
high. |